CMOS image sensors including backside illumination structure and method of manufacturing image sensor

ABSTRACT

An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of and claims priority fromU.S. patent application Ser. No. 12/037,691, filed on Feb. 26, 2008 nowU.S. Pat. No. 8,164,126, which claims priority under 35 U.S.C. §119 toKorean Patent Application No. 10-2007-0019134, filed on Feb. 26, 2007 inthe Korean Intellectual Property Office, the disclosures of which arehereby incorporated by reference herein in their entireties.

FIELD OF THE INVENTION

The present invention relates to image sensors and methods ofmanufacturing image sensors.

BACKGROUND

Image sensors are semiconductor devices that convert an optical imageinto an electric signal. Examples of image sensors are a charge coupleddevice (CCD) and a complementary metal-oxide-silicon (CMOS) imagesensor.

The CCD includes metal-oxide-silicon capacitors that are formed veryclose to one another, wherein charge carriers are stored and transportedinto the metal-oxide-silicon capacitors. The CMOS image sensor functionsbased on CMOS technology, which uses control circuits and signalprocessing circuits as peripheral circuits, employs a switching methodin which MOS transistors are formed corresponding to the number ofpixels and the output is detected using the MOS transistors.

The CMOS image sensor may be driven more easily than the CCD, and may beadvantageous in terms of minimized modules because signal processingcircuits can be integrated into one chip, and thus, a system-on-chip maybe realized. Accordingly, CMOS image sensors are widely used in mobilephones, cameras for personal computers, and electronic appliances.

FIG. 1 is a cross-sectional view of a conventional 3D integration CMOSimage sensor.

Referring to FIG. 1, the conventional 3D integration CMOS image sensorincludes a light receiving unit including a photo diode (PD) 10 formedon a substrate, a wiring line layer 20, a color filter array (CFA) 30,and a micro-lens 40. As such, the wiring line layer 20 comprises aplurality of wiring lines M1 through M4 and transparent insulatinglayers disposed between the CFA 30 and the PD 10.

The manufacturing method of the conventional 3D integration CMOS imagesensor includes a back end of line (BEOL) method, that is, a metal linemethod that is similar to that in a manufacturing process of asemiconductor device. In this case, different insulating materials canbe used for forming a pre-metal dielectric (PMD), an inter-metaldielectric (IMD), and a passivation layer. Thus, light may be diffusedat interfaces between the pre-metal dielectric (PMD), inter-metaldielectric (IMD), and passivation layers, and as such, thephotosensitivity of the conventional 3D integration CMOS image sensormay be decreased.

Also, due to the different refractive indices of the differentinsulating layers, the photosensitivity of the conventional 3Dintegration CMOS image sensor may be decreased due to the refraction oflight. In addition, since the metal wiring lines M1 through M4 areformed and the transparent insulating layers are planarized afterforming a photo diode when manufacturing the conventional 3D integrationCMOS image sensor, defects due to these processes may occur.

In cases where a plurality of transistors are arranged around the photodiode for signal processing and control, the surface area for receivinglight for each pixel may be reduced. In other words, saturation of alight-receiving region of each pixel may be reduced. Accordingly, noisemay be increased, and a danger of losing images according to such noiseincreases, and thereby, deteriorating image quality.

SUMMARY

According to an aspect of the present invention, there is provided animage sensor having a backside illumination structure, comprising: aphoto diode unit comprising photo diodes formed, and transfer gatetransistors, which respectively correspond to the photo diodes, formedin a first wafer; a wiring line unit comprising transistors, for signalprocessing and controlling, and wiring lines formed on a second waferbonded to the photo diode unit; a supporting substrate bonded to thewiring line unit; and a filter unit formed under the first wafer.

The second wafer may be implanted with hydrogen ions, and the wiringline unit may include the transistors, for signal processing andcontrolling, formed on a region that is remained after a predeterminedportion of the second wafer is removed by smart-cutting. The secondwafer may be bonded to the photo diode unit by being closely stacked andannealing.

The photo diode unit may include floating diffusion regions respectivelyformed adjacent to the photo diodes and an insulating layer formed onthe entire first wafer covering the transfer gate transistors. Thetransistors, for signal processing and controlling, may include at leastone of a source follower transistor, a selection transistor, and a resettransistor.

In order to maximize saturation, one transistor (1 Tr/pixel) may beformed for one photo diode in the photo diode unit in the image sensor.Also, the filter unit may include filter arrays transmitting lightaccording to its wavelength and micro-lenses for focusing light to thefilter arrays, and light may be directly incident on the photo diodesthrough the filter unit. The wiring line unit may be formed above thephoto diodes and not under the photo diodes, and thus, photosensitivityof light may be maximized.

According to another aspect of the present invention, there is provideda method of manufacturing an image sensor having a backside illuminationstructure, the method comprising: forming a photo diode unit comprisingphoto diodes, and transfer gate transistors, which respectivelycorrespond to the photo diodes, in a first wafer; bonding the photodiode unit on a second wafer and forming a wiring line unit includingtransistors, for signal processing and controlling, and wiring lines onthe second wafer; bonding a supporting substrate on the wiring lineunit; and forming a filter unit below the first wafer.

The forming of the photo diode unit may comprise: forming photo diodesin the first wafer; forming floating diffusion regions respectively inthe first wafer adjacent to the photo diodes; forming the transfer gatetransistors respectively on the photo diodes; and forming an insulatinglayer on the entire surface of the first wafer covering the transfergate transistors.

Also, the second wafer may be implanted with hydrogen ions, and thebonding of the second wafer to the photo diode unit and the forming ofthe wiring line unit may comprise: bonding a top surface of the secondwafer that is implanted with hydrogen ions to the photo diode unit;removing a predetermined portion of the second wafer by smart-cutting;forming transistors, for signal processing and controlling, on theremaining second wafer; and performing a back end of line (BEOL) processon the transistors that are used for signal processing and controlling.

Each of the transistors, for signal processing and controlling, mayinclude at least one of a source follower transistor, a selectiontransistor, and a reset transistor.

The method may further comprise polishing a rear surface of the firstwafer in order for the first wafer to be thin before forming a filterunit below the first wafer. The first wafer may have a thickness of 10μm or less due to the polishing. The forming of the filter unit maycomprise: forming filter arrays below the first wafer, which transmitlight according to the wavelength of light; and forming micro-lenses forfocusing light under the filter array.

According to the present invention, as the wiring lines are formed infront of the photo diode and the filter unit is disposed at thebackside, the problem of decrease in photosensitivity which occurs inthe conventional art due to the presence of conventional metal wiringlines can be effectively excluded. In addition, only one transistor isformed for one photo diode in the photo diode unit, and thus, thesaturation of the light receiving region can be maximized. Furthermore,transistors and wiring lines are formed after bonding the second wafer,and thus vertical contacts and vias can be easily formed between thetransistors and the wiring lines.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a conventional three dimensional(3D) integration complementary metal-oxide-silicon (CMOS) image sensor;

FIG. 2 is a cross-sectional of an image sensor having a backsideillumination structure according to an embodiment of the presentinvention; and

FIGS. 3A through 3I are cross-sectional views illustrating a method ofmanufacturing an image sensor having a backside illumination structure,according to another embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS ACCORDING TO THE INVENTION

The present invention is described more fully hereinafter with referenceto the accompanying drawings, in which embodiments of the invention areshown by way of example. The present invention may, however, be embodiedin many different forms and should not be construed as limited to theexample embodiments set forth herein. Rather, these example embodimentsare provided so that this disclosure will be thorough and complete, andwill fully convey the scope of the present invention to those skilled inthe art. Moreover, each embodiment described and illustrated hereinincludes its complementary conductivity type embodiment as well.

It will be understood that when an element is referred to as being“connected to,” “coupled to” or “responsive to” (and/or variantsthereof) another element, it can be directly connected, coupled orresponsive to the other element or intervening elements may be present.In contrast, when an element is referred to as being “directly connectedto,” “directly coupled to” or “directly responsive to” (and/or variantsthereof) another element, there are no intervening elements present.Like numbers refer to like elements throughout. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items and may be abbreviated as “/”.

It will be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, components,regions, layers and/or sections, these elements, components, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising” (and/or variants thereof), when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof. In contrast,the term “consisting of ” (and/or variants thereof) when used in thisspecification, specifies the stated number of features, integers, steps,operations, elements, and/or components, and precludes additionalfeatures, integers, steps, operations, elements, and/or components.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which the present invention belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent application, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Furthermore, relative terms such as “below,” “beneath,” or “lower,”“above,” and “upper” may be used herein to describe one element'srelationship to another element as illustrated in the accompanyingdrawings. It will be understood that relative terms are intended toencompass different orientations of the device in addition to theorientation depicted in the accompanying drawings. For example, if thedevice in the accompanying drawings is turned over, elements describedas being on the “lower” side of other elements would then be oriented on“upper” sides of the other elements. Similarly, if the device in one ofthe figures is turned over, elements described as “below” or “beneath”other elements would then be oriented “above” the other elements.Therefore, the exemplary terms “below” and “beneath” can, therefore,encompass both an orientation of above and below.

Embodiments of the present invention are described herein with referenceto cross-section illustrations that are schematic illustrations ofidealized embodiments of the present invention. As such, variations fromthe shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,embodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing.

It will be understood that, as used herein, the term “downstream” can beused to indicate the relative position of an element or unit within anincident light path. For example, when a first element or unit isdescribed as positioned downstream in the incident light path relativeto a second element, the incident light transmitted along the incidentlight path impacts the second element before the first element.Conversely, as used herein, the term “upstream” can also be used toindicate the relative position of the element or unit within an incidentlight path. In the example given above, the second element can bedescribed as being upstream from the first element.

As described herein, as appreciated by the present inventors, improvedimage quality and reduced noise may be provided by configuring a CMOSimage sensor photodiode to be down stream from a color filter array andmicro-lens in an incident light path while also being upstream in thepath from the wiring layers, etc. This arrangement may also reducediffraction and diffusion of light along the light path to thephotodiodes.

FIG. 2 is a cross-sectional of an image sensor having a backsideillumination structure according to an embodiment of the presentinvention. Referring to FIG. 2, the image sensor includes a photo diodeunit 100 comprising a first wafer 110, a wiring line unit 200 comprisinga second wafer 210 that is on the photo diode unit 100, a supportingsubstrate 300 formed on the wiring line unit 200, and a filter unit 400formed below the first wafer 110.

The photo diode unit 100 includes photo diodes 120 formed in a firstwafer 110, floating diffusion (FD) regions 130 respectively formedadjacent to the photo diodes 120, and transfer gate transistors 140respectively formed on the photo diodes 120 for transmitting signalsthereto. A first insulating layer 150 is formed on the entire firstwafer 110 covering the transfer gate transistors 140.

The photo diode unit 100 of the image sensor according to the currentembodiment of the present invention includes a transfer gate transistor140 for each photo diode 120, and thus, saturation of the image sensorcan be significantly increased as compared to a conventional imagesensor. The saturation of the image sensor refers to the percentage ofthe surface area of a light receiving region to a unit pixel surfacearea and is referred to as a fill factor. The conventional image sensorhas low saturation because a plurality of transistors, for signalprocessing and controlling, are formed around the light-receiving regionin which the photo diode is formed. However, in the image sensoraccording to the current embodiment of the present invention, only onetransfer gate transistor 140 is formed for each photo diode 120, andthus, saturation of the image sensor can be maximized.

The wiring line unit 200 is formed on the photo diode unit 100 andincludes transistors 220, for signal processing and controlling, formedon the second wafer 210, a plurality of wiring lines 230, and verticalcontacts or vias 240 electrically connecting the transistors 220 and 240to the wiring lines 230 and the wiring lines 230 to each other. A secondinsulating layer 250 is formed on the second wafer 210 as describedabove, and the second insulating layer 250 may be formed of a pluralityof insulating layers formed of various insulating materials as describedabove.

The transistors 220, for signal processing and controlling, may be atleast one of a source follower transistor, a selection transistor, and areset transistor, however, not a transfer gate transistor. The transfergate transistors 140 and the transistors 220, for signal processing andcontrolling, are connected via the vertical contacts or vias 240 thatare connected to the wiring lines 230.

The vertical contacts or vias 240 are formed together with the wiringlines 230 after the second wafer 210 is bonded to the photo diode unit100, and thus, can be easily aligned. Accordingly, the vertical contactsor vias 240 can be formed to have a very small width.

A supporting substrate 300 is bonded on the wiring line unit 200, andthe supporting substrate 300 supports the entire image sensor.

The filter unit 400 formed below the first wafer 110 includes colorfilter arrays 410 of red, green, and blue colors, which transmit lightaccording to the wavelength of light and micro-lenses 420 for focusinglight under the color filter arrays 410.

The image sensor according to the current embodiment of the presentinvention includes the filter unit 400 formed below the first wafer 110in which the photo diodes 120 are formed, and thus, has a backsideillumination structure in which light A is incident under the firstwafer 110. Accordingly, problems such as a decrease in thephotosensitivity due to diffused reflection or difference in therefractive index of the conventional front side illumination structurecaused by light passing through a wiring line layer can be effectivelysolved. Also, the first wafer 110 is made to several μm or less bypolishing a rear surface of the first wafer 110, and thereby, reducingthe incident distance of light and increase the photosensitivity of theimage sensor.

FIGS. 3A through 3I are cross-sectional views illustrating a method ofmanufacturing an image sensor having a backside illumination structure,according to another embodiment of the present invention.

Referring to FIG. 3A, first, the photo diodes 120 and the floatingdiffusion regions 130 are formed in a first wafer 110 a, the transfergate transistors 140 are formed on the first wafer 110 a, and a firstinsulating layer 150 is formed on the entire surface of the first wafer100 a covering the transfer gate transistors 140 to complete a photodiode unit 100.

Referring to FIG. 3B, a second wafer 210 a, which is different from thefirst wafer 110 a, is prepared and hydrogen ions are implanted into thesecond wafer 210 a as indicated by arrow B. Hydrogen ions are implantedin the second wafer to cut a predetermined portion of the second wafer210 a by smart-cutting, which will be performed later, to remove thepredetermined portion of the second wafer 210 a. In the presentembodiment, hydrogen ions are implanted into the second wafer 210 a upto a point shown by dotted line 212, as shown in FIG. 3B, and, as laterperformed, the predetermined portion from the dotted line 212 to anupper surface of the second wafer 210 a is cut. Here, the upper surfaceof the second wafer 210 a is illustrated to be in the lower portion ofFIG. 3B as the second wafer 210 a is arranged such that a surfacethereof above the dotted line 212 that is to be bonded to the firstinsulating layer 150 later is oriented upward.

Referring to FIG. 3C, the second wafer 210 a is bonded to the photodiode unit 100 by annealing after the predetermined portion of thesecond wafer 210 a has been removed. In detail, the second wafer 210 ais closely stacked on the photo diode unit 100 and annealed at asuitable temperature. Thus, the predetermined portion of the secondwafer 210 a, that is, an upper portion from the dotted line 212 to theupper surface of the second wafer 210 a is separated, and thus removedfrom the second wafer 210 a. Such a method is called smart-cutting andthe annealing may be performed at 300 to 600° C.

Referring to FIG. 3D, the second wafer 210 that has the predeterminedportion removed is stacked on the photo diode unit 100. Then, annealingat a higher temperature may further be performed in order to strengthenthe bonding of the second wafer 210 a to the photo diode unit 100.

Referring to FIG. 3E, the transistors 220, for signal processing andcontrolling, are formed on the second wafer 210. For example, thetransistors 220, for signal processing and controlling, may each be asource follower transistor, a selection transistor, or a resettransistor except for a transfer gate transistor. The first wiring lines232 may be formed above the transistors 220 for signal processing andcontrolling. The vertical contacts or vias 240 are formed before thefirst wiring lines 232 are formed, and thus, the transistors 220, forsignal processing and controlling, and the transfer gate transistors 140can be electrically connected to the first wiring lines 232.

Referring to FIG. 3F, a plurality of wiring lines such as second andthird wiring lines 234 and 236 may further be formed above the firstwiring lines 232, and the second and third wiring lines 234 and 236 arealso electrically connected to each other via the vertical contacts orvias 240. In the present embodiment, the wiring lines 230 comprising thefirst, second and third wiring lines 232, 234 and 236 are formed,however, there can be more or less than three wiring lines formed.

The wiring line unit 200 is completed by fully completing the process ofthe wiring lines 230 that is referred to as a back end of line (BEOL)process. In the present embodiment, the second insulating layer 250 isillustrated to be one layer as in FIG. 3F, however, as described above,the wiring lines 230 can be formed as a plurality of wiring lines andthus interlayer insulating layers between wiring lines may also beformed as multiple layers formed of other insulating materials.

Referring to FIG. 3G, the supporting substrate 300, such as a thirdwafer, is bonded on the wiring line unit 200 after the BEOL process. Thesupporting substrate 300 supports the entire image sensor. Like thesecond wafer 210, the supporting substrate 300 is also bonded by beingclosely stacked on the wiring line unit 200 and annealed at a hightemperature.

Referring to FIG. 3H, a rear surface of the first wafer 110 a, in whichthe photo diode unit 100 is formed, is polished. The thickness of thefirst wafer 110 a can be controlled to be several μm, for example, 10 μmor less, by polishing. Accordingly, the path of light incident from thefilter unit 400 that is to be formed below the first wafer 110 a isminimized to maximize the photosensitivity of the photo diodes 120.

Referring to FIG. 3I, the filter unit 400 is formed below the rearsurface of the first wafer 110 a. In other words, the color filterarrays 410 and the micro-lenses 420 are formed.

According to the method of manufacturing an image sensor according tothe present invention, the wiring line unit 200 is formed in an oppositedirection to the filter unit 400 through which light is incident, andthus the conventional problem such as a decrease in photosensitivity dueto the diffused reflection or difference in the reflective index causedby light passing through wiring lines 230 between insulating layers canbe effectively excluded. In addition, since the wiring line unit 200 isformed after the second wafer 210 is bonded to the photo diode unit 100,the vertical contacts or holes 240 between the transfer gate transistors140, transistors for signal processing and controlling, and the wiringlines 230 can be easily formed to a small width.

Also, according to the method of manufacturing an image sensor accordingto the present invention, the photo diode unit is formed such that onetransistor, that is, one transfer gate transistor, is formed for onephoto diode. Thus, saturation of the light receiving region can bemaximized.

As described above, the image sensor having a backside illuminationstructure and the method of manufacturing the image sensor according tothe present invention includes metal wiring lines arranged in front ofthe photo diodes and the filter unit at the backside of the photodiodes, and thus the problem of a decrease in photosensitivity caused bythe metal wiring lines in the conventional art can be effectivelyexcluded.

Also, since one transistor is formed for one photo diode in the photodiode unit, saturation of the light receiving region can be maximized.

Furthermore, since the transistor and the wiring lines are formed afterbonding the second wafer, transistors, and vertical contacts or viasbetween the wiring lines can be easily formed.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby one of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. An image sensor comprising: a photo diode unit including a firstwafer, the photo diode unit comprising photo diodes including a firstphoto diode and transfer gate transistors including a first transfergate transistor having a first gate, the transfer gate transistorscoupled to respective ones of the photo diodes, and the photo diode unitconfigured to be positioned in an incident light path; a second waferpositioned downstream from the first wafer with respect to the incidentlight path, the second wafer including additional transistors includinga second transistor having a second gate, wherein the first gate ispositioned on a downstream surface of the first wafer with respect tothe incident light path, and wherein the second gate is positioned on adownstream surface of the second wafer with respect to the incidentlight path.
 2. The image sensor of claim 1, wherein the first photodiode, the first gate, and the second gate are positioned to overlap ina direction of the incident light path.
 3. The image sensor of claim 1,further comprising: a filter unit upstream in the incident light pathfrom the first wafer such that the photo diode unit is between thefilter unit and the second wafer.
 4. The image sensor of claim 3,wherein: the filter unit includes an array of filters extending in adirection perpendicular to the direction of the incident light path, anda filter of the filter unit is positioned to overlap the first photodiode, the first gate, and the second gate in a direction of theincident light path.
 5. The image sensor of claim 1, further comprising:a wiring line on the second wafer, at least part of the wiring linebeing downstream from the second gate with respect to the incident lightpath.
 6. The image sensor of claim 5, wherein the wiring line, the firstphoto diode, the first gate, and the second gate are positioned tooverlap in a direction of the incident light path.
 7. The image sensorof claim 1, wherein each photo diode of the photo diode unit correspondsto one respective transistor of the additional transistors.
 8. The imagesensor of claim 1, wherein each one of the transfer gate transistors iselectrically connected to a respective transistor of the additionaltransistors.
 9. An image sensor comprising: a photo diode unit in afirst wafer, the photo diode unit comprising photo diodes including afirst photo diode and transfer gate transistors including a firsttransfer gate transistor having a first gate, the transfer gatetransistors coupled to respective ones of the photo diodes, and thephoto diode unit configured to be positioned in an incident light path;and a second wafer positioned downstream from the first wafer withrespect to the incident light path, the second wafer includingadditional transistors including at least a second transistor having asecond gate, wherein the first photo diode, the first gate, and thesecond gate are positioned to overlap in a direction of the incidentlight path.
 10. The image sensor of claim 9, wherein: the first gate ispositioned on a downstream surface of the first wafer with respect tothe incident light path, and the second gate is positioned on adownstream surface of the second wafer with respect to the incidentlight path.
 11. The image sensor of claim 9, further comprising: afilter unit upstream in the incident light path from the first wafersuch that the photo diode unit is between the filter unit and the secondwafer.
 12. The image sensor of claim 11, wherein: the filter unitincludes an array of filters extending in a direction perpendicular tothe direction of the incident light path, and a filter of the filterunit is positioned to overlap the first photo diode, the first gate, andthe second gate in a direction of the incident light path.
 13. The imagesensor of claim 9, further comprising: a wiring line on the secondwafer, at least part of the wiring line being downstream from the secondgate with respect to the incident light path.
 14. The image sensor ofclaim 13, wherein the wiring line is positioned to overlap the firstphoto diode, the first gate, and the second gate in a direction of theincident light path.
 15. The image sensor of claim 9, wherein each photodiode of the photo diode unit corresponds to one respective transistorof the additional transistors.
 16. The image sensor of claim 9, whereineach one of the transfer gate transistors is electrically connected to arespective transistor of the additional transistors.
 17. An image sensorcomprising: a filter unit including an array of filters extending in afirst direction, the filter array including a first filter; a photodiode unit in a first wafer, the photo diode unit comprising photodiodes including a first photo diode and transfer gate transistorsincluding a first transfer gate transistor having a first gate, thetransfer gate transistors coupled to respective ones of the photodiodes, wherein the first photo diode is positioned between the firstfilter and the first gate in a second direction perpendicular to thefirst direction; and a second wafer including additional transistorsincluding at least a second transistor having a second gate, wherein thefirst gate is positioned between the second gate and the first photodiode in the second direction.
 18. The image sensor of claim 17, whereinthe second direction is a direction of an incident light path.
 19. Theimage sensor of claim 17, further comprising: a wiring line positionedsuch that the second gate is positioned between the first gate and atleast part of the wiring line in the second direction.
 20. The imagesensor of claim 17, wherein each one of the transfer gate transistors iselectrically connected to a respective transistor of the additionaltransistors.